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TC55V4000ST-70 Datasheet(PDF) 5 Page - Toshiba Semiconductor

No. de pieza TC55V4000ST-70
Descripción Electrónicos  524,288-WORD BY 8-BIT STATIC RAM
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC55V4000ST-70 Datasheet(HTML) 5 Page - Toshiba Semiconductor

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TC55V4000ST-70,-85
2001-11-30
5/10
AC CHARACTERISTICS AND OPERATING CONDITIONS
(Ta
==== −−−−40° to 85°C, VDD ==== 2.3 to 3.6 V)
READ CYCLE
TC55V4000ST
-70
-85
SYMBOL
PARAMETER
MIN
MAX
MIN
MAX
UNIT
tRC
Read Cycle Time
85
100
tACC
Address Access Time
85
100
tCO
Chip Enable Access Time
85
100
tOE
Output Enable Access Time
45
50
tCOE
Chip Enable Low to Output Active
5
5
tOEE
Output Enable Low to Output Active
0
0
tOD
Chip Enable High to Output High-Z
35
40
tODO
Output Enable High to Output High-Z
35
40
tOH
Output Data Hold Time
10
10
ns
WRITE CYCLE
TC55V4000ST
-70
-85
SYMBOL
PARAMETER
MIN
MAX
MIN
MAX
UNIT
tWC
Write Cycle Time
85
100
tWP
Write Pulse Width
55
60
tCW
Chip Enable to End of Write
70
80
tAS
Address Setup Time
0
0
tWR
Write Recovery Time
0
0
tODW
R/W Low to Output High-Z
35
40
tOEW
R/W High to Output Active
0
0
tDS
Data Setup Time
40
40
tDH
Data Hold Time
0
0
ns
AC TEST CONDITIONS
PARAMETER
TEST CONDITION
Output load
30 pF
+ 1 TTL Gate
Input pulse level
VDD − 0.2 V, 0.2 V
Timing measurements
VDD × 0.5
Reference level
VDD × 0.5
tR, tF
5 ns


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