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2SK3476 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SK3476 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page 2SK3476 2002-01-09 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3476 VHF- and UHF-band Amplifier Applications · Output power: PO = 7.0 W (min) · Gain: GP = 11.4dB (min) · Drain efficiency: ηD = 60% (min) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 20 V Gain-source voltage VGSS ±5 V Drain current ID 3 A Power dissipation PD (Note 1) 20 W Channel temperature Tch 150 °C Storage temperature range Tstg −45~150 °C Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB) Marking Caution Please take care to avoid generating static electricity when handling this transistor. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-5N1A Type name 1 UC F 2 3 1. Gate 2. Source (heat sink) 3. Drain ** Lo No. Dot |
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