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TS19830CS Datasheet(PDF) 3 Page - Taiwan Semiconductor Company, Ltd |
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TS19830CS Datasheet(HTML) 3 Page - Taiwan Semiconductor Company, Ltd |
3 / 8 page TS19830CS Taiwan Semiconductor 3 Version: A1704 ELECTRICAL SPECIFICATIONS (V CC = 18V, TA = 25°C unless otherwise noted) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT Supply Voltage Start-up Current VCC(ST) VCC= VUVLO(on) -1V -- 45 -- μA Operating Current IOPA Operating @ 60kHz -- 2.1 2.6 mA UVLO(off) VUVLO(off) 7 8 9 V UVLO(on) VUVLO(on) 16 17.5 19 V OVP Level on VCC Pin VOVP 29 31 33 V Voltage Feedback Feedback Reference Voltage VFB 0.196 0.2 0.204 V Transconductance gm -- 58 -- μS Output Sink Current IO-SINK -- 5.8 -- μA Output Source Current IO-SOURCE -- 5.8 -- μA Current Sensing Open Loop Voltage VOLP CS Pin Open -- 5 -- V Leading-Edge Blanking Time tLEB -- 400 -- ns Delay to Output tDELAY -- 100 -- ns Current Limit CL Limit Voltage VOCP -- 0.3 -- V Switching Frequency Start Frequency fSTR -- 4.5 -- kHz ELECTRICAL SPECIFICATIONS (V CC = 18V, TA = 25°C unless otherwise noted) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT MOSFET section Drain-Source Breakdown Voltage BVDS 500 -- -- V Drain-Source On Resistance RDS(ON) -- 2.3 -- Ω Thermal Section (Note 5,6) Thermal Shutdown -- 150 -- °C Thermal Shutdown Release -- 120 -- °C Note: 1. Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device. These are for stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may remain possibility to affect device reliability. 2. Devices are ESD sensitive. Handing precaution recommended. 3. Thermal Resistance is specified with the component mounted on a low effective thermal conductivity test board in free air at TA=25°C. 4. The device is not guaranteed to function outside its operating conditions. 5. Guaranteed by design. 6. Auto Recovery Type. |
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