TSM089N08LCR datasheet(3/6 Pages) TSC

No. de pieza	TSM089N08LCR

Descripción Electrónicos	Low gate charge for fast power switching

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Fabricante Electrónico	TSC [Taiwan Semiconductor Company, Ltd]

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TSM089N08LCR

Taiwan Semiconductor

3

Version: A1608

CHARACTERISTICS CURVES

(TA = 25°C unless otherwise noted)

Output Characteristics

Transfer Characteristics

On-Resistance vs. Drain Current

Gate-Source Voltage vs. Gate Charge

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-Source Voltage

VGS, Gate to Source Voltage (V)

VDS, Drain to Source Voltage (V)

ID, Drain Current (A)

Qg, Gate Charge (nC)

TJ, Junction Temperature (°C)

VGS, Gate to Source Voltage (V)

0

2

4

6

8

10

0

20

40

60

80

100

V

DS=40V

I

D=12A

0

0.5

1

1.5

2

2.5

-75

-50

-25

0

25

50

75

100

125

150

V

GS=10V

I

D=12A

0

6

12

18

24

30

0

1

2

3

4

5

25℃

-55℃

150℃

0.002

0.004

0.006

0.008

0.01

0.012

0

6

12

18

24

30

V

GS=10V

V

GS=4.5V

0.003

0.004

0.005

0.006

0.007

0.008

0.009

0.01

3

4

5

6

7

8

9

10

I

D=12A

0

6

12

18

24

30

0

1

2

3

4

5

V

GS=10V

V

GS=7V

V

GS=5V

V

GS=4.5V

V

GS=4V

V

GS=3.5V

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TSM089N08LCR Datasheet(PDF) 3 Page - Taiwan Semiconductor Company, Ltd

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