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TMA8N50H Datasheet(PDF) 1 Page - Wuxi Unigroup Microelectronics Company |
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TMA8N50H Datasheet(HTML) 1 Page - Wuxi Unigroup Microelectronics Company |
1 / 7 page TMA8N50H www.tsinghuaicwx.com V3.0 Wuxi Unigroup Microelectronics Company FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA8N50H TO-220F A8N50H Absolute Maximum Ratings T C = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage (V GS = 0V) V DSS 500 V Continuous Drain Current I D 8 A Pulsed Drain Current (note1) I DM 32 A Gate-Source Voltage V GSS ±30 V Single Pulse Avalanche Energy (note2) E AS 198 mJ Avalanche Current (note1) I AR 4.5 A Repetitive Avalanche Energy (note1) E AR 40 mJ Power Dissipation (T C = 25ºC) P D 63 W Operating Junction and Storage Temperature Range T J, Tstg -55~+150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case R thJC 1.98 ºC/W Thermal Resistance, Junction-to-Ambient R thJA 62.5 500V N-Channel MOSFET 1 |
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