TPA65R1K2C datasheet(3/12 Pages) WUMC

No. de pieza	TPA65R1K2C

Descripción Electrónicos	650V Super-Junction Power MOSFET

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Fabricante Electrónico	WUMC [Wuxi Unigroup Microelectronics Company]

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TPP65R1K2C, TPA65R1K2C, TPU65R1K2C, TPD65R1K2C, TPC65R1K2C, TPB65R1K2C

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Wuxi Unigroup Microelectronics Company

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Typical Characteristics T

J = 25ºC, unless otherwise noted

102

101

100

10-1

10-2

10-3

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance vs. Drain Current

Figure 4. Capacitance

Figure 5. Gate Charge

Figure 6. Body Diode Forward Voltage

V

DS, Drain-to-Source Voltage (V)

V

GS, Gate-to-Source Voltage (V)

I

D, Drain Current (A)

V

DS, Drain-to-Source Voltage (V)

Q

g, Total Gate Charge (nC)

V

SD, Source-to-Drain Voltage (V)

T

J = 25ºC

T

J = 150ºC

V

DS = 10V

V

DD = 120V

V

DD = 560V

T

J = 25ºC

T

J = 150ºC

103

102

101

V

GS = 0V

f = 1MHz

C

iss

C

oss

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rss

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104

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20V

10V

6V

5.5V

5V

4.5V

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GS = 10V

T

J = 25ºC

Número de pieza similar - TPA65R1K2C

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Wuxi Unigroup Microelec...	TPA65R1K2C	1Mb / 12P	650V Super-Junction Power MOSFET

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TPA65R1K2C Datasheet(PDF) 3 Page - Wuxi Unigroup Microelectronics Company

TPA65R1K2C Datasheet(HTML) 3 Page - Wuxi Unigroup Microelectronics Company

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