NTE251 datasheet(2/3 Pages) NTE | Silicon Complementary Transistors Darlington Power Amplifier

2 page

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF Characteristics

Collector–Emitter SustainingVoltage

VCEO(sus) IC = 100mA, IB = 0

100

–

Collector Cutoff Current

ICEO

VCE = 50V, IE = 0

–

1.0

ICEX

VCE = 100V, VBE(off) = 1.5V

–

0.5

VCE = 100V, VBE(off) = 1.5V,

TA = +150°C

–

5.0

Emitter Cutoff Current

IEBO

VBE = 5V, IC = 0

–

2.0

ON Characteristics (Note 1)

DC Current Gain

hFE

VCE = 3V, IC = 10A

750

–

18000

VCE = 3V, IC = 20A

100

–

Collector–Emitter Saturation Voltage

VCE(sat)

IC = 10A, IB = 40mA

–

2.0

IC = 20A, IB = 200mA

–

3.0

Base–Emitter Saturation Voltage

VBE(sat)

IC = 20A, IB = 200mA

–

4.0

Base–Emitter ON Voltage

VBE(on)

VCE = 3V, IC = 10A

–

2.8

Dynamic Characteristics

Small–Signal Current Gain

hfe

VCE = 3V, IC = 10A, f = 1kHz

300

–

Magnitude of Common Emitter

Small–Signal Short–Circuit

Forward Current Transfer Ratio

|hfe|

VCE = 3V, IC = 10A, f = 1MHz

4.0

–

MHz

Output Capacitance

NTE251

NTE252

Cob

VCB = 10V, IE = 0, f = 0.1MHz

–

400

600

Note 1. Pulse Test: Pulse Width = 300

µs, Duty Cycle = 2%

Schematic Diagram

NPN

PNP

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