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SKP15N60 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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SKP15N60 Datasheet(HTML) 2 Page - Infineon Technologies AG |
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2 / 14 page  SKP15N60, SKB15N60 SKW15N60 2Jul-02 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case R thJC 0.9 Diode thermal resistance, junction – case R thJC D 1.7 Thermal resistance, junction – ambient R thJA TO-220AB TO-247AC 62 40 SMD version, device on PCB 1) R thJA TO-263AB 40 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. Typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V, IC =500 µA 600 - - Collector-emitter saturation voltage VCE(sat ) VGE = 15 V, IC =15A T j =2 5 °C T j =150 °C 1.7 - 2 2.3 2.4 2.8 Diode forward voltage VF VGE =0V, IF =15A T j =2 5 °C T j =150 °C 1.2 - 1.4 1.25 1.8 1.65 Gate-emitter threshold voltage VGE(th) I C =400 µA,V CE = V GE 34 5 V Zero gate voltage collector current I CE S VCE =600V, V GE =0V T j =2 5 °C T j =150 °C - - - - 40 2000 µA Gate-emitter leakage current I GE S VCE =0V, VGE =20V - - 100 nA Transconductance g fs VCE =20V, IC =15A 3 10.9 - S Dynamic Characteristic Input capacitance C iss - 800 960 Output capacitance C os s - 84 101 Reverse transfer capacitance C rs s VCE =25V, VGE =0V, f =1M H z -52 62 pF Gate charge Q Gat e VCC =480V, I C =15A VGE =15V -76 99 nC Internal emitter inductance measured 5mm (0.197 in.) from case L E TO - 2 2 0 A B TO - 2 4 7 A C - - 7 13 - - nH Short circuit collector current 2) I C( SC ) VGE =15V,t SC ≤10µs VCC ≤ 600V, T j ≤ 150°C - 150 - A 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s. |
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Descripción similar - SKP15N60 |
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