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IRF2807S Datasheet(PDF) 2 Page - International Rectifier

No. de pieza IRF2807S
Descripción Electrónicos  HEXFET Power MOSFET
Download  10 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRF2807S Datasheet(HTML) 2 Page - International Rectifier

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IRF2807S/IRF2807L
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.2
V
TJ = 25°C, IS = 43A, VGS = 0V
„
trr
Reverse Recovery Time
–––
100
150
ns
TJ = 25°C, IF = 43A
Qrr
Reverse Recovery Charge
–––
410
610
nC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
82
‡
280
A
‚ Starting T
J = 25°C, L = 370µH
RG = 25Ω, IAS = 43A, VGS=10V (See Figure 12)
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Notes:
ƒ I
SD ≤ 43A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… This is a typical value at device destruction and represents
operation outside rated limits.
† This is a calculated value limited to TJ = 175°C .
‡ Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to application
note #AN-994
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
75
–––
–––
VVGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.074 –––
V/°C
Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
13
m
VGS = 10V, ID = 43A
„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
38
–––
–––
SVDS = 50V, ID = 43A
„
–––
–––
25
µA
VDS = 75V, VGS = 0V
–––
–––
250
VDS = 60V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -20V
Qg
Total Gate Charge
–––
–––
160
ID = 43A
Qgs
Gate-to-Source Charge
–––
–––
29
nC
VDS = 60V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
55
VGS = 10V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
–––
13
–––
VDD = 38V
tr
Rise Time
–––
64
–––
ID = 43A
td(off)
Turn-Off Delay Time
–––
49
–––
RG = 2.5Ω
tf
Fall Time
–––
48
–––
VGS = 10V, See Fig. 10
„
Between lead,
–––
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
3820 –––
VGS = 0V
Coss
Output Capacitance
–––
610
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
130
–––
pF
ƒ = 1.0MHz, See Fig. 5
EAS
Single Pulse Avalanche Energy
‚
––– 1280
…340† mJ
IAS = 50A, L = 370µH
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
–––
S
D
G
IGSS
ns
4.5
7.5
IDSS
Drain-to-Source Leakage Current


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