IW4516B

158

MAXIMUM RATINGS

*

Symbol

Parameter

Value

Unit

DC Supply Voltage (Referenced to GND)

-0.5 to +20

V

DC Input Voltage (Referenced to GND)

V

DC Output Voltage (Referenced to GND)

V

DC Input Current, per Pin

±10

mA

Power Dissipation in Still Air, Plastic DIP+

SOIC Package+

750

500

mW

Power Dissipation per Output Transistor

100

mW

Tstg

Storage Temperature

-65 to +150

°C

Lead Temperature, 1 mm from Case for 10 Seconds

(Plastic DIP or SOIC Package)

260

°C

Functional operation should be restricted to the Recommended Operating Conditions.

+Derating - Plastic DIP: - 10 mW/

°C from 65° to 125°C

SOIC Package: : - 7 mW/

°C from 65° to 125°C

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

Min

Max

Unit

DC Supply Voltage (Referenced to GND)

3.0

18

V

DC Input Voltage, Output Voltage (Referenced to GND)

0

V

Operating Temperature, All Package Types

-55

+125

°C

This device contains protection circuitry to guard against damage due to high static voltages or electric

fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated

GND

≤(V

Unused outputs must be left open.