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SI4412ADY Datasheet(PDF) 3 Page - Vishay Siliconix

No. de pieza SI4412ADY
Descripción Electrónicos  N-Channel 30-V (D-S) MOSFET
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
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SI4412ADY Datasheet(HTML) 3 Page - Vishay Siliconix

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Si4412ADY
Vishay Siliconix
Document Number: 71105
S-03951—Rev. B, 26-May-03
www.vishay.com
2-3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
200
400
600
800
1000
1200
0
6
12
18
24
30
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50
- 25
0
25
50
75
100
125
150
0
2
4
6
8
10
0
4
8
12
16
0.00
0.01
0.02
0.03
0.04
0.05
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
Crss
Coss
Ciss
VDS = 15 V
ID = 2 A
ID - Drain Current (A)
VGS = 10 V
ID = 8 A
VGS = 10 V
Gate Charge
On-Resistance vs. Drain Current
Qg - Total Gate Charge (nC)
Capacitance
On-Resistance vs. Junction Temperature
TJ - Junction Temperature (_C)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.00
0.02
0.04
0.06
0.08
0.10
0
2468
10
TJ = 25_C
ID = 3.9 A
30
10
1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
VGS = 4.5 V
TJ = 150_C


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