SI7886DP datasheet(2/4 Pages) VISHAY

No. de pieza	SI7886DP

Descripción Electrónicos	N-Channel 30-V (D-S) MOSFET

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Fabricante Electrónico	VISHAY [Vishay Siliconix]

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Si7886DP

Vishay Siliconix

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www.vishay.com

2

Document Number: 71842

S-20350—Rev. A, 18-Apr-02

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

0.6

1

1.4

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "12 V

"100

nA

VDS = 24 V, VGS = 0 V

1

m

Zero Gate Voltage Drain Current

IDSS

VDS = 24 V, VGS = 0 V, TJ = 55_C

5

mA

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 10 V

30

A

a

VGS = 10 V, ID = 25 A

0.0035

0.0045

W

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 23 A

0.0042

0.0055

W

Forward Transconductancea

gfs

VDS = 15 V, ID = 25 A

90

S

Diode Forward Voltagea

VSD

IS = 2.9 A, VGS = 0 V

0.75

1.1

V

Dynamicb

Total Gate Charge

Qg

42

55

Gate-Source Charge

Qgs

VDS = 15 V, VGS = 4.5 V, ID = 25 A

12.8

nC

Gate-Drain Charge

Qgd

7.7

Gate Resistance

RG

1.3

W

Turn-On Delay Time

td(on)

17

30

Rise Time

tr

VDD = 15 V, RL = 15 W

14

25

Turn-Off Delay Time

td(off)

VDD = 15 V, RL = 15 W

ID ^ 1 A, VGEN = 10 V, RG = 6 W

158

230

ns

Fall Time

tf

43

65

Source-Drain Reverse Recovery Time

trr

IF = 2.9 A, di/dt = 100 A/ms

50

80

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

10

20

30

40

50

60

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0

10

20

30

40

50

60

02468

10

VGS = 10 thru 3 V

25

_C

TC = 125_C

–55

_C

2 V

Output Characteristics

Transfer Characteristics

VDS – Drain-to-Source Voltage (V)

VGS – Gate-to-Source Voltage (V)

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