TPC8210 datasheet(1/7 Pages) TOSHIBA

No. de pieza	TPC8210

Descripción Electrónicos	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

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TPC8210

2003-02-18

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS III)

TPC8210

Lithium Ion Battery Applications

Portable Equipment Applications

Notebook PC Applications

l Low drain−source ON resistance: RDS (ON) = 11 mΩ (typ.)

l High forward transfer admittance: |Yfs| = 13 S (typ.)

l Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)

l Enhancement−mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

30

V

Drain-gate voltage (RGS = 20 kΩ)

VDGR

30

V

Gate-source voltage

VGSS

±20

V

D C

(Note 1)

ID

8

Drain current

Pulse

(Note 1)

IDP

32

A

Single-device

operation

(Note 3a)

PD (1)

1.5

Drain power

dissipation

(t = 10 s)

(Note 2a)

Single-device value

at dual operation

(Note 3b)

PD(2)

1.1

W

Single-device

operation

(Note 3a)

PD (1)

0.75

Drain power

dissipation

(t = 10 s)

(Note 2b)

Single-device value

at dual operation

(Note 3b)

PD (2)

0.45

W

Single pulse avalanche energy

(Note 4)

EAS

83.2

mJ

Avalanche current

IAR

8

A

Repetitive avalanche energy

Single-device value at dual operation

(Note 2a, 3b, 5)

EAR

0.1

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please

refer to the next page.

This transistor is an electrostatic sensitive device. Please handle with caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-6J1E

Weight: 0.08 g (typ.)

Circuit Configuration

8

7

6

5

1

2

3

4

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