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STA003T Datasheet(PDF) 4 Page - STMicroelectronics |
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STA003T Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 32 page 1. ELECTRICAL CHARACTERISTICS: VDD = 3.3V ±0.3V; Tamb = 0 to 70°C; Rg = 50Ω unless otherwise specified DC OPERATING CONDITIONS Symbol Parameter Value VDD Power Supply Voltage 2.7 to 3.6V Tj Operating Junction Temperature -20 to 125°C GENERAL INTERFACE ELECTRICAL CHARACTERISTICS Symbol Parameter Test Condition Min. Typ. Max. Unit Note IIL Low Level Input Current Without pull-up device Vi = 0V -10 10 µA1 IIH High Level Input Current Without pull-up device Vi = VDD -10 10 µA1 Vesd Electrostatic Protection Leakage < 1 µA 2000 V 2 Note 1: The leakage currents are generally very small, < 1nA. The value given here is a maximum that can occur after an electrostatic stress on the pin. Note 2: Human Body Model. DC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Condition Min. Typ. Max. Unit Note VIL Low Level Input Voltage 0.2*VDD V VIH High Level Input Voltage 0.8*VDD V Vol Low Level Output Voltage Iol = Xma 0.4V V 1, 2 Voh High Level Output Voltage 0.85*VDD V 1, 2 Note 1: Takes into account 200mV voltage drop in both supply lines. Note 2: X is the source/sink current under worst case conditions and is reflected in the name of the I/O cell according to the drive capability. Symbol Parameter Test Condition Min. Typ. Max. Unit Note Ipu Pull-up current Vi = 0V; pin numbers 7, 24 and 26 -25 -66 -125 µA1 Rpu Equivalent Pull-up Resistance 50 k Ω Note 1: Min. condition: VDD = 2.7V, 125°C Min process Max. condition: VDD = 3.6V, -20°C Max. POWER DISSIPATION Symbol Parameter Test Condition Min. Typ. Max. Unit Note PD Power Dissipation @ VDD = 3V Sampling_freq ≤24 kHz 120 mW Sampling_freq ≤32 kHz 125 mW Sampling_freq ≤48 kHz 135 mW STA003T 4/32 |
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