Motor de Búsqueda de Datasheet de Componentes Electrónicos
  Spanish  ▼
ALLDATASHEET.ES

X  

AM29SL160CT-100WCDN Datasheet(PDF) 4 Page - Advanced Micro Devices

No. de pieza AM29SL160CT-100WCDN
Descripción Electrónicos  16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory
Download  52 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  AMD [Advanced Micro Devices]
Página de inicio  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29SL160CT-100WCDN Datasheet(HTML) 4 Page - Advanced Micro Devices

  AM29SL160CT-100WCDN Datasheet HTML 1Page - Advanced Micro Devices AM29SL160CT-100WCDN Datasheet HTML 2Page - Advanced Micro Devices AM29SL160CT-100WCDN Datasheet HTML 3Page - Advanced Micro Devices AM29SL160CT-100WCDN Datasheet HTML 4Page - Advanced Micro Devices AM29SL160CT-100WCDN Datasheet HTML 5Page - Advanced Micro Devices AM29SL160CT-100WCDN Datasheet HTML 6Page - Advanced Micro Devices AM29SL160CT-100WCDN Datasheet HTML 7Page - Advanced Micro Devices AM29SL160CT-100WCDN Datasheet HTML 8Page - Advanced Micro Devices AM29SL160CT-100WCDN Datasheet HTML 9Page - Advanced Micro Devices Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 52 page
background image
4
Am29SL160C
November 1, 2004
GENERAL DESCRIPTION
The Am29SL160C is a 16 Mbit, 1.8 V volt-only Flash
memory organized as 2,097,152 bytes or 1,048,576
words. The data appears on DQ0–DQ15. The device is
offered in 48-pin TSOP and 48-ball FBGA packages.
The word-wide data (x16) appears on DQ15–DQ0; the
byte-wide (x8) data appears on DQ7–DQ0. This device is
designed to be programmed and erased in-system with a
single 1.8 volt VCC supply. No VPP is required for program
or erase operations. The device can also be programmed
in standard EPROM programmers.
The standard device offers access times of 90, 100,
120, or 150 ns, allowing microprocessors to operate
without wait states. To eliminate bus contention the
device has separate chip enable (CE#), write enable
(WE#) and output enable (OE#) controls.
The device requires only a single 1.8 volt power
supply for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Com-
mands are written to the command register using
standard microprocessor write timings. Register con-
tents serve as input to an internal state-machine that
controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed
for the programming and erase operations. Reading
data out of the device is similar to reading from other
Flash or EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that auto-
matically times the program pulse widths and verifies
proper cell margin. The Unlock Bypass mode facili-
tates faster programming times by requiring only two
write cycles to program data instead of four.
Device erasure occurs by executing the erase
command sequence. This initiates the Embedded
Erase algorithm—an internal algorithm that automati-
cally preprograms the array (if it is not already
programmed) before executing the erase operation.
During erase, the device automatically times the erase
pulse widths and verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle) status bits. After a program or erase cycle
completes, the device is ready to read array data or
accept another command.
The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low
VCC detector that automatically inhibits write operations
during power transitions. The hardware sector pro-
tection feature disables both program and erase
operations in any combination of the sectors of
memory. This is achieved in-system or via program-
ming equipment.
The Erase Suspend feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The hardware RESET# pin terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor to
read the boot-up firmware from the Flash memory.
The device offers two power-saving features. When
addresses are stable for a specified amount of time, the
device enters the automatic sleep mode. The system
can also place the device into the standby mode.
Power consumption is greatly reduced in both modes.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effective-
ness. The device electrically erases all bits within a
sector simultaneously via Fowler-Nordheim tunneling.
The data is programmed using hot electron injection.


Número de pieza similar - AM29SL160CT-100WCDN

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Advanced Micro Devices
AM29SL160CT-100WCD AMD-AM29SL160CT-100WCD Datasheet
1Mb / 52P
   16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
More results

Descripción similar - AM29SL160CT-100WCDN

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Advanced Micro Devices
AM29DS163D AMD-AM29DS163D Datasheet
1Mb / 50P
   16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
logo
ATMEL Corporation
AT49SV163D ATMEL-AT49SV163D Datasheet
463Kb / 30P
   16-megabit 1M x 16) 1.8-volt Only Flash Memory
AT49SV802A ATMEL-AT49SV802A Datasheet
417Kb / 31P
   8-megabit 1.8-volt Only Flash Memory
AT49SV322D ATMEL-AT49SV322D Datasheet
519Kb / 32P
   32-megabit (2M x 16) 1.8-volt Only Flash Memory
logo
Advanced Micro Devices
AM29SL160C AMD-AM29SL160C_07 Datasheet
1Mb / 52P
   16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
logo
SPANSION
S29AL016D SPANSION-S29AL016D Datasheet
1Mb / 58P
   16 MEGABIT CMOS 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY
S29AL032D SPANSION-S29AL032D Datasheet
1Mb / 69P
   32 Megabit CMOS 3.0 Volt-only Flash Memory
AM29SL400D SPANSION-AM29SL400D Datasheet
776Kb / 41P
   4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
logo
Eon Silicon Solution In...
EN39SL160AHL EON-EN39SL160AHL Datasheet
524Kb / 50P
   16 Megabit (1024K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only
logo
Advanced Micro Devices
AM29SL800D AMD-AM29SL800D_07 Datasheet
1Mb / 46P
   8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52


Datasheet Descarga

Go To PDF Page


Enlace URL




Política de Privacidad
ALLDATASHEET.ES
¿ALLDATASHEET es útil para Ud.?  [ DONATE ] 

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com