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GSD2004WS

 High-Voltage Small-Signal Switching Diode ( 2 Page)


VISHAY
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GSD2004WS
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88202
2
14-May-02
Electrical Characteristics TJ = 25°C unless otherwise noted
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Breakdown Voltage
VBR
IR = 100
µA
300
——
V
Leakage Current
IR
VR = 240V
——
100
nA
VR = 240V, Tj = 150°C
——
100
µA
Forward Voltage
VF
IF = 20mA
0.83
0.87
V
IF = 100mA
——
1.00
Capacitance
Ctot
VF = VR = 0
——
5.0
pF
f = 1MHz
Reverse Recovery Time
trr
IF = IA = 30mA
——
50
ns
Irr = 3.0mA, RL = 100
Note:
(1 )Device on fiberglass substrate, see layout
1  2 



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