NTE38 datasheet(3/3 Pages) NTE | Silicon Complementary Transistors High Voltage, Medium Power Switch

Nombre de pieza

Descripción

NTE38

Silicon Complementary Transistors High Voltage, Medium Power Switch ( 3 Page)

NTE

3 page

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Second Breakdown

Second Breakdown Collector Current

NTE38

IS/b

t = 1s (Non–Repetitive), VCE = 40V

875

–

NTE175

VCE = 100V

350

–

Switching Characteristics

NTE38

Rise Time

VCC = 200V, IC = 1A

–

0.6

µs

Storage Time

IB1 = IB2 = 125mA

–

2.5

µs

Fall Time

–

0.6

µs

NTE175

Rise Time

VCC = 200V,

IB1 = 100mA, RL = 200Ω

–

3.0

µs

Storage Time

IC = 1A

IB1 = IB2 = 100mA

–

4.0

µs

Fall Time

–

3.0

µs

.485 (12.3)

Dia

.062 (1.57)

.295 (7.5)

.360

(9.14)

Min

.031 (0.78) Dia

.960 (24.3)

Base

.580 (14.7)

.200

(5.08)

Emitter

Collector/Case

.145 (3.7) R Max

.147 (3.75) Dia

(2 Places)

1 2 3

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