NTE38 datasheet(2/3 Pages) NTE | Silicon Complementary Transistors High Voltage, Medium Power Switch

2 page

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF Characteristics (Note 2)

Collector–Emitter Sustaining Voltage

NTE38

VCEO(sus) IC = 200mA, IB = 0

350

–

NTE175

300

–

Collector–Emitter Sustaining Voltage

NTE38 Only

VCEX(sus) IC = 200mA, VBE = –1.5V, L = 10mH

400

–

VCER(sus) IC = 200mA, IB = 0, RBE = 50Ω

375

–

Emitter–Base Breakdown Voltage

NTE38 Only

VEBO

IE = 0.5mA, IC = 0

–

Collector Cutoff Current

ICEO

VCE = 150V, IB = 0

–

Collector Cutoff Current

NTE38

ICEV

VCE = 250V, VBE(off) = 1.5V

–

0.5

VCE = 250V, VBE(off) = 1.5V, TC = +100°C

–

5.0

VCE = 315V, VBE(off) = 1.5V

–

0.5

VCE = 315V, VBE(off) = 1.5V, TC = +100°C

–

5.0

VCE = 360V, VBE(off) = 1.5V

–

0.5

VCE = 360V, VBE(off) = 1.5V, TC = +100°C

–

5.0

NTE175

ICEX

VCE = 450V, VBE(off) = 1.5V

–

1.0

VCE = 300V, VBE(off) = 1.5V, TC = +150°C

–

3.0

Emitter Cutoff Current

IEBO

VEB = 6V, IC = 0

–

0.5

ON Characteristics (Note 2)

DC Current Gain

NTE38

hFE

IC = 1A, VCE = 4V

–

100

NTE175

IC = 0.1A, VCE = 10V

–

IC = 1A, VCE = 2V

–

IC = 1A, VCE = 10V

–

100

Collector–Emitter Saturation Voltage

NTE38

VCE(sat)

IC = 1A, IB = 125mA

–

2.0

NTE175

–

0.75

Base–Emitter Saturation Voltage

NTE38

VBE(sat)

IC = 1A, IB = 125mA

–

1.4

NTE175

IC = 1A, IB = 100mA

–

1.4

Base–Emitter ON Voltage

NTE175 Only

VBE(on)

IC = 1A, VCE = 10V

–

1.4

Dynamic Characteristics

Current Gain –Bandwidth Product

NTE38

IC = 200mA, VCE = 10V, ftest = 5MHz,

–

MHz

NTE175

test

Note 3

–

MHz

Output Capacitance (NTE175 Only)

Cob

VCB = 10V, IE = 0, f = 1MHz

–

120

Note 2. Pulse Test: Pulse Width

≤ 300µs, Duty Cycle ≤ 2%.

Note 3. fT = |hfe| ftest

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