FMMTA56-2G datasheet(1/1 Pages) ZETEX

No. de pieza	FMMTA56-2G

Descripción Electrónicos	SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

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SOT23 PNP SILICON PLANAR

MEDIUM POWER TRANSISTORS

ISSUE 3 JANUARY 1996

7

FEATURES

* Gain of 50 at IC=100mA

PARTMARKING DETAIL -

FMMTA55 - 2H

FMMTA56 - 2G

FMMTA55R - NB

FMMTA56R - MB

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

FMMTA55 FMMTA56

UNIT

Collector-Base Voltage

VCBO

-60

-80

V

Collector-Emitter Voltage

VCEO

-60

-80

V

Emitter-Base Voltage

VEBO

-4

V

Continuous Collector Current

IC

-500

mA

Power Dissipation at Tamb=25°C

Ptot

330

mW

Operating and Storage Temperature

Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C).

FMMTA55

FMMTA56

PARAMETER

SYMBOL MIN.

MAX. MIN.

MAX. UNIT CONDITIONS.

Collector-Emitter

Breakdown Voltage

V(BR)CEO

-60

-80

V

IC=-1mA, IB=0*

Emitter-Base

Breakdown Voltage

V(BR)EBO

-4

V

IE=-100µA, IC=0

Collector-Emitter

Cut-Off Current

ICES

-0.1

µ

A

VCE=-60V

Collector-Base

Cut-Off Current

ICBO

-0.1

µ

A

VCB=-80V, IE=0

VCB=-60V, IE=0

Static Forward

Current Transfer Ratio

hFE

50

IC=-10mA, VCE=1V*

IC=-100mA, VCE=1V*

Collector-Emitter

Saturation Voltage

VCE(sat)

-0.25

-0.25 V

IC=-100mA,

IB=-10mA*

Base-Emitter

Turn-On Voltage

VBE(on)

-1.2

V

IC=-100mA, VCE=-1V*

Transition

Frequency

fT

100

MHz

IC=-10mA, VCE=-2V

f=100MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

FMMTA55

FMMTA56

3 - 177

C

B

E

SOT23

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