NTE396 datasheet(2/2 Pages) NTE | Silicon NPN Transistor Power Amplifier & High Speed Switch (Compl to NTE397)

Nombre de pieza

Descripción

NTE396

Silicon NPN Transistor Power Amplifier & High Speed Switch (Compl to NTE397) ( 2 Page)

NTE

2 page

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Small–Signal Characteristics

Current Gain–Bandwidth Product

IC = 10mA, VCE = 10V, f = 50MHz

–

MHz

Output Capacitance

Cobo

VCB = 10V, IE = 0, f = 1MHz

–

Input Capacitance

Cibo

VCB = 5V, IC = 0, f = 1MHz

–

Small–Signal Current Gain

hfe

IC = 5mA, VCE = 10V, f = 1MHz

–

Real Part of Input Impedance

Re(hie)

VCE = 10V, IC = 5mA, f = 1MHz

–

300

Ω

.260

(6.6)

Max

.500

(12.7)

Min

.370 (9.39) Dia Max

.355 (9.03) Dia Max

.031 (.793)

Emitter

Base

Collector/Case

.018 (0.45)

1 2

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