2N3749 datasheet(2/2 Pages) MICROSEMI

No. de pieza	2N3749

Descripción Electrónicos	PNP POWER SILICON TRANSISTOR

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Fabricante Electrónico	MICROSEMI [Microsemi Corporation]

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2N2880, 2N3749 JAN SERIES

ELECTRICAL CHARACTERISTICS (Con’t)

Characteristics

Symbol

Min.

Max.

Unit

ON CHARACTERISTICS

Forward-Current Transfer Ratio

IC = 50 mAdc, VCE = 5.0 Vdc

IC = 1.0 Adc, VCE = 2.0 Vdc

IC = 5.0 Adc, VCE = 5.0 Vdc

hFE

40

15

120

Base-Emitter Voltage Non-Saturated

VCE = 2.0 Adc, IC =1.0 Adc

VBE

1.2

Vdc

Collector-Emitter Saturation Voltage

IC = 1.0 Adc, IB = 0.1 Adc

IC = 5.0 Adc, IB = 0.5 Adc

VCE(sat)

0.25

1.5

Vdc

Base-Emitter Saturation Voltage

IC = 1.0 Adc, IB = 0.1 Adc

VBE(sat)

1.2

Vdc

DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter Small-Signal Short-Circuit

Forward Current Transfer Ratio

IC = 1.0 Adc, VCE = 10 Vdc, f = 10 MHz

h

fe



3.0

12

Small-Signal Short-Circuit Forward Current Transfer Ratio

IC = 50 mAdc, VCE = 5.0 Vdc, f = 1 kHz

hfe

40

140

Output Capacitance

VCB = 10 Vdc, IE = 0, 100 ≤ f ≤ 1.0 MHz

Cobo

150

pF

SAFE OPERATING AREA

DC Tests

TC = 100

0C, t = 10 s

Test 1

VCE = 80 Vdc, IC = 80 mAdc

Test 2

VCE = 20 Vdc, IC = 1.5 Adc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

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