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BTS50025-1TAD Datasheet(PDF) 18 Page - Infineon Technologies AG

No. de pieza BTS50025-1TAD
Descripción Electrónicos  Smart High-Side Power Switch
Download  51 Pages
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Fabricante Electrónico  INFINEON [Infineon Technologies AG]
Página de inicio  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BTS50025-1TAD Datasheet(HTML) 18 Page - Infineon Technologies AG

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Data Sheet
18
Rev. 1.1
2017-03-30
BTS50025-1TAD
Smart High-Side Power Switch
Functional Description
Following equation simplifies under the assumption of RL = 0 Ω.
(5.2)
The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 5 for
the maximum allowed energy dissipation as function of the load current.
5.1.4
Switching Active Loads
When switching generative or electronic loads such as motors or secondary ECUs which have the ability to
feed back voltage disturbances to the OUT pins, special attention is required about the resulting absolute and
dynamic voltage VDS between VS pin and OUT pins.
To maintain device functionality it is required to limit the maximum positive or negative slew rate of
VDS = VS - VOUT below |dVDS/dt| (parameter P_4.2.7) .
In case the device operates at low battery voltage (VS < VS(NOM),Min) where the load feeds back a positive output
voltage reaching almost VS potential (0 < VDS < 1 V), it has to be ensured that for each activation (turn-on
event), where the device is commanded on by applying VIN(H) at IN pin, a maximum positive or negative slew
rate of VDS below |dVDS/dt| (parameter P_4.2.8) will not be exceeded until tON(DELAY) has expired.
Also in the case of low VS and low VDS during the rising edge of IN, the device might not turn on. Figure 11
shows the worst case boundary condition. In such condition, if the device does not turn on, it will be latched.
Figure 11 Boundary conditions for switching active loads at low VS with low initial VDS voltage.
( Not subject to production test, specified by design)
For loads that generate steady or dynamic voltage at the OUT pins which is higher than voltage at VS pin
please consider Chapter 5.1.5.
E =
1
2
× L × IL
2 ×
(1 −
VS
VS − VDS(CL) )
0
0.5
1
1.5
2
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
VS [V]


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