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BTS50025-1TAD Datasheet(PDF) 19 Page - Infineon Technologies AG

No. de pieza BTS50025-1TAD
Descripción Electrónicos  Smart High-Side Power Switch
Download  51 Pages
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Fabricante Electrónico  INFINEON [Infineon Technologies AG]
Página de inicio  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BTS50025-1TAD Datasheet(HTML) 19 Page - Infineon Technologies AG

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Data Sheet
19
Rev. 1.1
2017-03-30
BTS50025-1TAD
Smart High-Side Power Switch
Functional Description
5.1.5
Inverse Current Capability
In case of inverse current, meaning a voltage VOUT(INV) at the output higher than the supply voltage VS, a current
IL(INV) will flow from output to VS pin via the body diode of the power transistor (please refer to Figure 12). In
case the IN pin is HIGH, the power DMOS is already activated and will continue to remain in ON state during
the inverse event. In case, the input goes from “L” to “H”, the DMOS will be activated even during an inverse
event. Under inverse condition, the device is not overtemperature / overload protected. During inverse mode
at ON the sense pin will provide a leakage current of less or equal to IIS0. Due to the limited speed of INV
comparator, the inverse duration needs to be limited.
Figure 12 Inverse Current Circuitry
Figure 13 Inverse Behavior - Timing Diagram
OUT
VS
VBAT
IL(INV)
OL
comp.
VOUT(INV)
INV
Comp.
Gate
driver
GND
VOUT
VS
< tp,INV,noFAULT
IIS
IIS(fault)
tOFF (trip )
Internal Fault -flag set
t
t
VOUT
VS
> tp,INV,noFAULT
IIS
tsIS(ON)
t
t
(a) Inverse spike during ON -mode
for short times (< tp,INV,noFAULT)
(b) Inverse spike during ON -mode
for times > tp,INV,noFAULT
VOUT
VS
IIS
tp,noINV,FAULT
t
t
(c) Inverse spike during ON -mode with short
circuit after leaving Inverse mode
IIS(fault)
tpIS(FAULT )


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