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BUK7608-55A Datasheet(PDF) 6 Page - NXP Semiconductors

No. de pieza BUK7608-55A
Descripción Electrónicos  TrenchMOS standard level FET
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK7608-55A Datasheet(HTML) 6 Page - NXP Semiconductors

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Philips Semiconductors
BUK7508-55A; BUK7608-55A
TrenchMOS™ standard level FET
Product data
Rev. 02 — 17 January 2002
6 of 14
9397 750 09091
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 25 A; VGS =0V;
Figure 15
-
0.85
1.2
V
trr
reverse recovery time
IS =75A; dIS/dt = −100 A/µs
VGS = −10 V; VDS =30V
-65
-
ns
Qr
recovered charge
-
170
-
nC
Table 5:
Characteristics…continued
Tj =25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj =25 °C; tp = 300 µsTj =25 °C; ID =25A
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
160
140
120
100
80
60
40
20
0
ID
(A)
0
246
8
10
VDS (V)
VGS = 4.5 V
5.0 V
5.5 V
6.0 V
6.5 V
7.0 V
8.0 V
10 V
18 V
03nh45
03nh44
6
8
10
12
14
5
101520
VGS (V)
RDSon
(m
Ω)
03nh46
5
10
15
20
25
0
20
40
60
80
100
120
ID (A)
RDSon
(m
Ω)
VGS = 5.5 (V)
6
6.5
7.5
10
9
7
03ne89
0
0.5
1
1.5
2
-60
0
60
120
180
Tj (ºC)
a
a
R
DSon
R
DSon 25 C
°
()
-----------------------------
=


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