CXK79M36C162GB datasheet(9/25 Pages) SONY

No. de pieza	CXK79M36C162GB

Descripción Electrónicos	18Mb 1x2Lp HSTL High Speed Synchronous SRAMs (512Kb x 36)

Download	25 Pages

Scroll/Zoom	100%

Fabricante Electrónico	SONY [Sony Corporation]

Página de inicio	http://www.sony.co.jp

Logo

9 / 25 page

SONY®

ΣRAM

Preliminary

18Mb 1x2Lp, HSTL, rev 1.1

9 / 25

November 8, 2002

CXK79M36C162GB

•DC Electrical Characteristics

(VDD =1.8V ± 0.1V, VSS =0V, TA =0 to 85

oC)

1. For maximum output drive (i.e. minimum impedance), the ZQ pin can be tied directly to VSS.

2. For minimum output drive (i.e. maximum impedance), the ZQ pin can be left unconnected or tied directly to VDDQ.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Notes

Input Leakage Current

(Address, Control, Clock)

ILI

VIN =VSS to VDDQ

-5

---

5

uA

Input Leakage Current

(EP2, EP3)

IMLI1

VMIN =VSS to VDD

-10

---

10

uA

Input Leakage Current

(MCH)

IMLI2

VMIN =VMIH (min) to VDD

-10

---

10

uA

Input Leakage Current

(MCL)

IMLI3

VMIN =VSS to VMIL (max)

-10

---

10

uA

Output Leakage Current

ILO

VOUT =VSS to VDDQ

-10

---

10

uA

Average Power Supply

Operating Current

IDD-33

IDD-4

IDD-5

IOUT =0mA

VIN =VIH or VIL

---

750

650

550

mA

Power Supply Deselect

Operating Current

IDD2

IOUT =0mA

VIN =VIH or VIL

---

250

mA

Output High Voltage

VOH

IOH =-7.0mA

RQ = 250

Ω

VDDQ - 0.4

---

V

Output Low Voltage

VOL

IOL =7.0 mA

RQ = 250

Ω

---

0.4

V

Output Driver Impedance

ROUT

VOH,VOL =VDDQ/2

RQ

< 150Ω

---

35

(30*1.15)

Ω

1

VOH,VOL =VDDQ/2

150

Ω≤ RQ ≤ 300Ω

(RQ/5)*

0.85

RQ/5

(RQ/5)*

1.15

Ω

VOH,VOL =VDDQ/2

RQ

> 300Ω

51

(60*0.85)

---

Ω

2

Número de pieza similar - CXK79M36C162GB

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Sony Corporation	CXK79M36C164GB	476Kb / 28P	18Mb 1x1Dp HSTL High Speed Synchronous SRAMs (256Kb x 72 or 512Kb x 36)
Sony Corporation	CXK79M36C165GB	450Kb / 29P	18Mb 1x1Dp LVCMOS High Speed Synchronous SRAMs (256Kb x 72 or 512Kb x 36)

More results

Descripción similar - CXK79M36C162GB

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Sony Corporation	CXK79M72C164GB	476Kb / 28P	18Mb 1x1Dp HSTL High Speed Synchronous SRAMs (256Kb x 72 or 512Kb x 36)
	CXK79M72C165GB	450Kb / 29P	18Mb 1x1Dp LVCMOS High Speed Synchronous SRAMs (256Kb x 72 or 512Kb x 36)
	CXK77P36E160GB	257Kb / 25P	16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18)
GSI Technology	GS8161E18BT	1Mb / 35P	1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
	GS8161E18BT-V	1Mb / 35P	1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
	GS8160E18T	622Kb / 25P	1M x 18, 512K x 36 18Mb Sync Burst SRAMs
	GS8160V18CT	558Kb / 21P	1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
	GS8161V18CD	776Kb / 28P	1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
	GS816018C	567Kb / 22P	1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
	GS816118C	769Kb / 29P	1M x 18 and 512K x 36 18Mb Sync Burst SRAMs

More results

CXK79M36C162GB Datasheet(PDF) 9 Page - Sony Corporation

CXK79M36C162GB Datasheet(HTML) 9 Page - Sony Corporation

Número de pieza similar - CXK79M36C162GB

Descripción similar - CXK79M36C162GB

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

Datasheet Descarga

Enlace URL