STP40N20 datasheet(2/13 Pages) STMICROELECTRONICS

No. de pieza	STP40N20

Descripción Electrónicos	N-CHANNEL 200V - 0.038 OHM - 40A TO-220/TO-247/D2PAK LOW GATE CHARGE STripFET MOSFET

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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2 / 13 page

STB40N20 - STP40N20 - STW40N20

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Table 3: Absolute Maximum ratings

( ) Pulse width limited by safe operating area

(1) ISD ≤ 40A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

Table 4: Thermal Data

Table 5: Avalanche Characteristics

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

200

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)200

V

VGS

Gate- source Voltage

± 20

V

ID

Drain Current (continuous) at TC = 25°C

40

A

ID

Drain Current (continuous) at TC = 100°C

25

A

IDM ( )

Drain Current (pulsed)

160

A

PTOT

Total Dissipation at TC = 25°C

160

W

Derating Factor

1.28

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

12

V/ns

Tj

Tstg

Operating Junction Temperature

Storage Temperature

-55 to 150

°C

TO-220/

TO-247

Rthj-case

Thermal Resistance Junction-case Max

0.78

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

50

°C/W

Tl

Maximum Lead Temperature For Soldering

Purpose

300

°C

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

40

A

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

230

mJ

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STP40N20 Datasheet(PDF) 2 Page - STMicroelectronics

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