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2SJ245L Datasheet(PDF) 4 Page - Hitachi Semiconductor |
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2SJ245L Datasheet(HTML) 4 Page - Hitachi Semiconductor |
4 / 7 page –1.0 –0.8 –0.6 –0.4 –0.2 0 –2–4–6 –8 –10 Gate to Source Voltage V (V) GS Pulse test –1 A –2 A I = –3 A D Drain to Source Saturation Voltage vs. Gate to Source Voltage 5 2 1 0.5 0.2 0.1 0.05 –0.5 –1 –2 –5 –10 –20 –50 Drain Current I (A) D Pulse test V = –4 V GS –10 V Static Drain to Source on State Resistance vs. Drain Current 1.0 0.8 0.6 0.4 0.2 –40 0 40 80 120 160 Case Temperature Tc (°C) 0 –I = –1, –2 A D –3 A –1, –2 A –3 A Pulse test V = –4 V –10 V GS Static Drain to Source on State Resistance vs. Temperature 10 5 2 1 0.5 0.2 0.1 –0.1 –0.2 –0.5 –1 –2 –5 –10 Drain Current I (A) D 25°C Tc = –25°C 75°C Pulse test V = –10 V DS Forward Transfer Admittance vs. Drain Current 2SJ245 L , 2SJ245 S |
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