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2SJ246S Datasheet(PDF) 4 Page - Hitachi Semiconductor |
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2SJ246S Datasheet(HTML) 4 Page - Hitachi Semiconductor |
4 / 7 page –2.0 –1.6 –1.2 –0.8 –0.4 0 –2–4–6 –8 –10 Gate to Source Voltage V (V) GS I = –5 A D Pulse test –2 A –1 A Drain to Source Saturation Voltage vs. Gate to Source Voltage 5 2 1 0.5 0.2 0.1 0.05 –0.1 –1 –10 –100 Drain Current I (A) D Pulse test –10 V V = –4 V GS Static Drain to Source on State Resistance vs. Drain Current 0.5 0.4 0.3 0.2 0.1 –40 0 40 80 120 160 Case Temperature Tc (°C) I = –5 A D Pulse test 0 –1 A V = –4 V GS –10 V –1 A, –2 A –5 A –2 A Static Drain to Source on State Resistance vs. Temperature 10 5 2 1 0.5 –0.1 –0.2 –0.5 –1 –2 –5 –10 Drain Current I (A) D Pusle test V = –10 V DS Tc = 25°C –25°C 75°C Forward Transfer Admittance vs. Drain Current 2SJ246 L , 2SJ246 S |
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