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2SJ246L Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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2SJ246L Datasheet(HTML) 2 Page - Hitachi Semiconductor |
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2 / 7 page  Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –30 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –100 µA VDS = –25 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.5 V VDS = –10 V, ID = –1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.12 0.17 Ω ID = –4 A resistance VGS = –10 V ———————————————————————— — 0.21 0.31 Ω ID = –4 A VGS = –4 V ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.0 5.0 — S VDS = –10 V ID = –4 A ——————————————————————————————————————————— Input capacitance Ciss — 660 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 465 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 180 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 10 — ns VGS = –10 V ———————————————————————————————— Rise time tr — 55 — ns ID = –4 V ———————————————————————————————— Turn–off delay time td(off) — 135 — ns RL = 7.5 Ω ———————————————————————————————— Fall time tf — 135 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.2 — V IF = –7 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr —90 — µs IF = –7 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— 2SJ246 L , 2SJ246 S |
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