Nombre de pieza
         Descripción
HSB88YP

 Silicon Schottky Barrier Diode for High Speed Switching ( 5 Page)


HITACHI
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HSB88YP
Rev.1, Sep. 2000, page 3 of 5
Main Characteristic
Forward voltage VF (V)
Reverse voltage V
R
(V)
Fig.1 Forward current Vs. Forward voltage
Fig.2 Reverse current Vs. Reverse voltage
Fig.3 Capacitance Vs. Reverse voltage
Reverse voltage VR (V)
10
10
1.0
f=1MHz
0.1
1.0
0.1
10
-3
10
-4
10
-5
10
-6
0
0.4
0.8
0.6
10
-2
0.2
Ta= - 25
°C
Ta= 75
°C
Ta= 25
°C
02
8
10
10
-6
10
-9
-8
6
4
10
10
-7
10
-10
Ta= - 25
°C
Ta= 25
°C
Ta= 75
°C
1  2  3  4  5 



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