PIMZ2 datasheet(3/9 Pages) PHILIPS | NPN/PNP general-purpose double transistors

3 page

9397 750 13966

Product data sheet

Rev. 05 — 24 November 2004

3 of 9

Philips Semiconductors

PIMZ2; PUMZ2

NPN/PNP general-purpose double transistors

Limiting values

[1]

Device mounted on an FR4 printed-circuit board.

Thermal characteristics

[1]

Device mounted on an FR4 printed-circuit board.

Table 6:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor; for the PNP transistor with negative polarity

VCBO

collector-base voltage

open emitter

VCEO

collector-emitter voltage

open base

VEBO

emitter-base voltage

open collector

collector current (DC)

150

ICM

peak collector current

200

IBM

peak base current

100

Ptot

total power dissipation

Tamb ≤ 25 °C

SOT457

[1] -

200

SOT363

[1] -

180

Tstg

storage temperature

−65

+150

°C

junction temperature

150

°C

Tamb

ambient temperature

−65

+150

°C

Per device

Ptot

total power dissipation

Tamb ≤ 25 °C

SOT457

[1] -

300

SOT363

[1] -

300

Table 7:

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

Rth(j-a)

thermal resistance from

junction to ambient

Tamb ≤ 25 °C

SOT457

[1] -

625

K/W

SOT363

[1] -

694

K/W

Per device

Rth(j-a)

thermal resistance from

junction to ambient

Tamb ≤ 25 °C

SOT457

[1] -

417

K/W

SOT363

[1] -

417

K/W

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