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KFN1G16Q2M-DEB5 Datasheet(PDF) 4 Page - Samsung semiconductor

No. de pieza KFN1G16Q2M-DEB5
Descripción Electrónicos  MuxOneNAND FLASH MEMORY
Download  124 Pages
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Fabricante Electrónico  SAMSUNG [Samsung semiconductor]
Página de inicio  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KFN1G16Q2M-DEB5 Datasheet(HTML) 4 Page - Samsung semiconductor

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MuxOneNAND1G(KFM1G16Q2M-DEB5)
FLASH MEMORY
4
MuxOneNAND2G(KFN2G16Q2M-DEB5)
Revision History
Revision No.
0.4
1.0
Remark
Preliminary
Final
Draft Date
Feb. 28, 2005
May. 17, 2005
History
1. Corrected the errata
2. Updated DC parameters to RMS Values
3. Revised Warm Reset Timing Diagram
4. Added INT Capacitance Information
5. Added Speed Information Ordering Information
6. Added Booting Sequence in Technical Note
7. Revised OTP Program and Lock Flow Chart
8. Revised tOEZ description on Chapter 5.5
9. Revised tASO value to 10ns
10. Added RDY and INT Pin behavior before IOBE=1
11. Added Erase suspend and Resume Information for Multi Block Erase
12. Added ILI and ILO values for DDP on Chater 4.3
1. Corrected the errata
2. Added Data Protection flow chart.
3. Removed Cache Read Operation.
4. Added additional information on command register.
5. Revised Interrupt status register information.
6. Added INT pin schematic.
7. Changed tPGM1 to 205 from 320us, tPGM2 to 220 from 350us.
8. Revised AC/DC parameters
9. Revised ECC Bypass Description
10. Revised Reset Parameters and Timing Diagrams.


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