S9016 datasheet(1/1 Pages) ETC | TO-92 Plastic-Encapsulate Transistors

1 page

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

S9016 TRANSISTOR (NPN)

FEATURES

Power dissipation

PCM:

0.3

W (Tamb=25

℃)

Collector current

ICM:

0.025

Collector-base voltage

V(BR)CBO:

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL

CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic= 100

µA, IE=0

Collector-emitter breakdown voltage

V(BR)CEO

Ic= o.1mA, IB=0

Emitter-base breakdown voltage

V(BR)EBO

IE= 100µA, IC=0

Collector cut-off current

ICBO

VCB= 30V, IE=0

0.1

µA

Emitter cut-off current

IEBO

VEB= 3V, IC=0

0.1

µA

DC current gain

hFE(1)

VCE=5V, IC= 1mA

270

Collector-emitter saturation voltage

VCE(sat)

IC= 10mA, IB= 1mA

0.3

Transition frequency

VCE= 5V, IC= 1mA

f =100MHz

300

MHz

CLASSIFICATION OF

hFE(1)

Rank

Range

28-45

39-60

54-80

72-108

97-146

132-198

180-270

1 2 3

TO-92

1. EMITTER

2. BASE

3. COLLECTOR

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