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2N5089 Datasheet(PDF) 2 Page - ON Semiconductor

No. de pieza 2N5089
Descripción Electrónicos  Amplifier Transistors
Download  8 Pages
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2N5089 Datasheet(HTML) 2 Page - ON Semiconductor

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2N5088 2N5089
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 µAdc, VCE = 5.0 Vdc)
2N5088
2N5089
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
2N5088
2N5089
(IC = 10 mAdc, VCE = 5.0 Vdc)(2)
2N5088
2N5089
hFE
300
400
350
450
300
400
900
1200
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VCE(sat)
0.5
Vdc
Base–Emitter On Voltage
(IC = 10 mAdc, VCE = 5.0 Vdc)(2)
VBE(on)
0.8
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz)
fT
50
MHz
Collector–Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
4.0
pF
Emitter–Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ceb
10
pF
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
2N5088
2N5089
hfe
350
450
1400
1800
Noise Figure
(IC = 100 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ,
2N5088
f = 1.0 kHz)
2N5089
NF
3.0
2.0
dB
2. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2.0%.
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model


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