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ISCNH12F Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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ISCNH12F Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 Isc N-Channel MOSFET Transistor ISCNH12F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA 650 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.25mA 2.0 4.0 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=6A 290 360 mΩ IGSS Gate-Source Leakage Current VGS= ±20V;VDS= 0V ± 0.1 μ A IDSS Drain-Source Leakage Current VDS=650V; VGS= 0V;Tc=25℃ 1 μ A VDS=650V; VGS= 0V;Tc=125℃ 100 VSD Diode forward voltage IS=12A, VGS = 0V 1.2 V |
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