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INA821 Datasheet(PDF) 5 Page - Texas Instruments

No. de pieza INA821
Descripción Electrónicos  35-關V Offset, 7-nV/?숰z Noise, Low-Power, Precision Instrumentation Amplifier
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Fabricante Electrónico  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
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INA821 Datasheet(HTML) 5 Page - Texas Instruments

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INA821
www.ti.com
SBOS893A – AUGUST 2018 – REVISED DECEMBER 2018
Product Folder Links: INA821
Submit Documentation Feedback
Copyright © 2018, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
Short-circuit to VS / 2.
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
Supply voltage
–20
20
V
Signal input pins
Voltage
–40
40
V
REF pin
–20
20
Signal output pins
(-Vs) - 0.5
(+Vs) + 0.5
V
Output short-circuit(2)
Continuous
Operating Temperature, TA
–50
150
°C
Junction Temperature, TJ
175
Storage Temperature, Tstg
–65
150
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±1500
V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
±750
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
Supply voltage VS
Single-supply
4.5
36
V
Dual-supply
±2.25
±18
Specified temperature
Specified temperature
–40
125
°C
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.4 Thermal Information
THERMAL METRIC(1)
INA821
UNIT
D (SOIC)
8 PINS
RθJA
Junction-to-ambient thermal resistance
119.6
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
66.3
°C/W
RθJB
Junction-to-board thermal resistance
61.9
°C/W
ψJT
Junction-to-top characterization parameter
20.5
°C/W
ψJB
Junction-to-board characterization parameter
61.4
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
°C/W


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