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2SK198 Datasheet(PDF) 1 Page - Panasonic Semiconductor

No. de pieza 2SK198
Descripción Electrónicos  For Low-Frequency Amplification
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Fabricante Electrónico  PANASONIC [Panasonic Semiconductor]
Página de inicio  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SK198 Datasheet(HTML) 1 Page - Panasonic Semiconductor

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Publication date: January 2002
SJF00006BED
Silicon Junction FETs (Small Signal)
2SK0198 (2SK198)
Silicon N-Channel Junction FET
For low-frequency amplification
s Features
q High mutual conductance g
m
q Low noise type
q Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
1: Source
JEDEC: TO-236
2: Drain
EIAJ: SC-59
3: Gate
Mini3-G1 Package
s Absolute Maximum Ratings (T
a = 25°C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
VDSX
VGDO
ID
IG
PD
Tch
Tstg
Ratings
30
−30
20
10
150
150
−55 to +150
Unit
V
V
mA
mA
mW
°C
°C
s Electrical Characteristics (T
a = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Source cut-off voltage
Mutual conductance
Input capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Noise figure
Symbol
IDSS*
IGSS
VGSC
gm
Ciss
Crss
NV
Conditions
VDS = 10 V, VGS = 0
VGS = −30 V, VDS = 0
VDS = 10 V, ID = 10 µA
VDS = 10 V, ID = 0.5 mA, f = 1 kHz
VDS = 10 V, VGS = 0, f = 1 kHz
VDS = 10 V, VGS = 0, f = 1 MHz
VDS = 30 V, ID = 1 mA, GV = 80 dB
Rg = 100 kΩ, Function = FLAT
min
0.5
− 0.1
4
max
12
−100
−1.5
Unit
mA
nA
V
mS
pF
pF
mV
* IDSS rank classification
Marking Symbol (Example): 1O
typ
13
14
3.5
60
Runk
IDSS (mA)
Marking Symbol
P
0.5 to 3
1OP
Q
2 to 6
1OQ
R
4 to 12
1OR
Note) The part number in the parenthesis shows conventional part number.
0.40
+0.10
–0.05
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
10˚
Unit: mm


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