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IRFE110 Datasheet(PDF) 2 Page - International Rectifier |
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IRFE110 Datasheet(HTML) 2 Page - International Rectifier |
2 / 7 page IRFE110 2 www.irf.com Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction to Case — — 8.3 RthJ-PCB Junction to PC Board — — 27""" Soldered to a copper clad PC board °C/W Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — 3.5 ISM Pulse Source Current (Body Diode) ➀ —— 1 4 VSD Diode Forward Voltage — — 1.5 V Tj = 25°C, IS =3.5A, VGS = 0V ➃ trr Reverse Recovery Time — — 180 nS Tj = 25°C, IF = 3.5A, di/dt ≤100A/µs QRR Reverse Recovery Charge — — 2.0 µc VDD ≤50V ➃ ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A For footnotes refer to the last page Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 100 — — V VGS = 0V, ID = 1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.12 — V/°C Reference to 25°C, ID = 1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 0.60 VGS = 10V, ID =2.25A➃ Resistance — — 0.69 VGS =10V, ID =3.5A ➃ VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID =250µA gfs Forward Transconductance 0.8 — — S ( ) VDS > 15V, IDS =2.25A➃ IDSS Zero Gate Voltage Drain Current — — 2 5 VDS=80V, VGS=0V — — 250 VDS =80V VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — 100 VGS =20V IGSS Gate-to-Source Leakage Reverse — — -100 VGS =-20V Qg Total Gate Charge — — 6.6 VGS =10V, ID= 3.5A Qgs Gate-to-Source Charge — — 1.7 nC VDS =50V Qgd Gate-to-Drain (‘Miller’) Charge — — 3.5 td(on) Turn-On Delay Time — — 1 5 VDD =50V, ID =3.5A, t r Rise Time — — 2 5 RG =7.5Ω td(off) Turn-Off Delay Time — — 2 5 tf Fall Time — — 2 0 LS + LD Total Inductance — 6.1 — Ciss Input Capacitance — 190 VGS = 0V, VDS =25V Coss Output Capacitance — 8 6 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 1 3 — nA nH ns µA Ω Measured from the center of drain pad to center of source pad |
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