1

QM3002K

N-Ch 30V Fast Switching MOSFETs

Symbol

Parameter

Rating

Units

10s

Steady State

Drain-Source Voltage

30

V

Gate-Sou

rce Voltage

±20

V

1

5.8

5

A

1

4.6

4

A

Pulsed Drain Current

2

25

A

Total Power Dissipation

3

1.32

1

W

Total Power Dissipation

3

0.84

0.64

W

Storage Temperature Range

-55 to 150

℃

Operating Junction Temperature Range

-55 to 150

℃

Symbol

Parameter

Typ.

Max.

Unit

Thermal Resistance Junction-ambient

1

---

125

℃/W

Thermal Resistance Junction-Ambient

---

95

℃/W

Thermal Resistance Junction-Case

1

---

80

℃/W

BVDSS

RDSON

ID

30V

28mΩ

5A

The QM3002K is the highest performance trench

N-ch MOSFETs with extreme high cell density ,

which provide excellent RDSON and gate charge

for most of the small power switching and load

switch applications.

The QM3002K meet the RoHS and Green Product

requirement with full function reliability approved.

Advanced high cell density Trench technology

Super Low Gate Charge

Excellent Cdv/dt effect decline

Green Device Available

General Description

Features

Applications

High Frequency Point-of-Load Synchronous

Small power switching for MB/NB/UMPC/VGA

Networking DC-DC Power System

Load Switch

Absolute Maximum Ratings

Thermal Data

SOT23 Pin Configuration

Product Summary

G

S

D

Rev A.05 D062016