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KA5M0765RC Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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KA5M0765RC Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 10 page KA5M0765RC S P S Preliminary NOTE: Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2% ELECTRICAL CHARACTERISTICS (SFET part) (Ta=25 °C unless otherwise specified) Characteristic Symbol Test condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS VGS=0V, ID=50µA650 −− V Zero gate voltage drain current IDSS VDS=Max., Rating, VGS=0V −− 50 µA VDS=0.8Max., Rating, VGS=0V, TC=125°C −− 200 µA Static drain-source on resistance (note) RDS(ON) VGS=10V, ID=0.5A − 1.25 1.6 Ω Forward transconductance (note) gfs VDS=50V, ID=0.5A 3.0 −− S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz − 1600 − pF Output capacitance Coss − 310 − Reverse transfer capacitance Crss − 120 − Turn on delay time td(on) VDD=0.5BVDSS, ID=1.0A (MOSFET switching time are essentially independent of operating temperature) − 25 − nS Rise time tr − 55 − Turn off delay time td(off) − 80 − Fall time tf − 50 − Total gate charge (gate-source+gate-drain) Qg VGS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time are essentially independent of operating temperature) −− 72 nC Gate-source charge Qgs − 9.3 − Gate-drain (Miller) charge Qgd − 29.3 − |
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