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SI6926ADQ Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI6926ADQ Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page Si6926ADQ Vishay Siliconix New Product www.vishay.com 2 Document Number: 72754 S-40230—Rev. A, 16-Feb-04 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typa Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 0.40 1.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 mA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V, TJ = 55_C 5 mA On-State Drain Currentb ID(on) VDS w 5 V, VGS = 5 V 10 A VGS = 4.5 V, ID = 4.5 A 0.024 0.030 Drain-Source On-State Resistanceb rDS(on) VGS = 3.0 V, ID = 4.2 A 0.026 0.033 W Drain-Source On-State Resistanceb rDS(on) VGS = 2.5 V, ID = 3.9 A 0.029 0.035 W VGS = 1.8 V, ID = 3.6 A 0.035 0.043 Forward Transconductanceb gfs VDS = 10 V, ID = 4.5 A 26 S Diode Forward Voltageb VSD IS = 0.83 A, VGS = 0 V 0.6 1.1 V Dynamica Total Gate Charge Qg 7.5 10.5 Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 4.5 A 1.2 nC Gate-Drain Charge Qgd 1.2 Gate Resistance Rg 1.9 W Turn-On Delay Time td(on) 6 12 Rise Time tr VDD = 10 V, RL = 10 W 16 25 Turn-Off Delay Time td(off) VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W 46 70 ns Fall Time tf 9 15 Source-Drain Reverse Recovery Time trr IF = 0.83 A, di/dt = 100 A/ms 20 40 Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 4 8 12 16 20 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0 4 8 12 16 20 0 1234 5 VGS = 5 thru 2 V TC = 125_C −55_C 25_C Output Characteristics Transfer Characteristics VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) 1.5 V |
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