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STF20NF06 Datasheet(PDF) 1 Page - STMicroelectronics |
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STF20NF06 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 10 page 1/10 December 2004 STP20NF06 STF20NF06 N-CHANNEL 60V - 0.06 Ω - 20A TO-220/TO-220FP STripFET™ II POWER MOSFET Rev. 1 Figure 1:Package Table 1: General Features ■ TYPICAL RDS(on) = 0.06 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED ■ 175oC OPERATING TEMPERATURE ■ HIGH dv/dt CAPABILITY ■ APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility APPLICATIONS ■ DC MOTOR CONTROL ■ DC-DC & DC-AC CONVERTERS TYPE VDSS RDS(on) ID STP20NF06 STF20NF06 60 V 60 V < 0.07 Ω < 0.07 Ω 20 A 20 A(*) 1 2 3 1 2 3 TO-220 TO-220FP Figure 2: Internal Schematic Diagram Table 2: Order Codes Table 3: ABSOLUTE MAXIMUM RATINGS ( •) Pulse width limited by safe operating area. (*)Refer to soa for the max allowable current value on FP-type due to Rth value (1) ISD ≤20A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Starting Tj = 25 oC, ID = 10A, VDD= 30V Part Number MARKING PACKAGE PACKAGING STP20NF06 STF20NF06 P20NF06 F20NF06 TO-220 TO-220FP TUBE TUBE Symbol Parameter Value Unit STP20NF06 STF20NF06 VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 60 V VGS Gate- source Voltage ± 20 V ID Drain Current (continuous) at TC = 25°C 20 20(*) A ID Drain Current (continuous) at TC = 100°C 14 14(*) A IDM(•) Drain Current (pulsed) 80 80(*) A Ptot Total Dissipation at TC = 25°C 60 28 W Derating Factor 0.4 0.18 W/°C dv/dt (1) Peak Diode Recovery voltage slope 9 V/ns EAS (2) Single Pulse Avalanche Energy 120 mJ Tstg Storage Temperature -55 to 175 °C Tj Operating Junction Temperature |
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