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STP16NK65Z Datasheet(PDF) 3 Page - STMicroelectronics |
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STP16NK65Z Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 12 page 3/12 STP16NK65Z - STB16NK65Z-S ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 7: On/Off Table 8: Dynamic Table 9: Source Drain Diode (1) Pulsed: Pulse duration = 300µs, duty cycle 1.5% (2) Pulse width limited by safe operating area (*) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 650 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20 V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 100 µA 33.75 4.5 V RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 6.5 A 0.38 0.50 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS = 15 V, ID = 6.5 A 12 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 2750 275 60 pF pF pF Coss eq. (*) Equivalent Output Capacitance VGS = 0V, VDS = 6.5 V to 520 V 188 pF td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD = 325 V, ID = 6.5 A RG = 4.7Ω VGS = 10 V (see Figure 17) 25 25 68 17 ns ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 520 V, ID = 13 A, VGS = 10 V (see Figure 20) 89 18 45 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 13 52 A A VSD (1) Forward On Voltage ISD = 13 A, VGS = 0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 13 A, di/dt = 100 A/µs, VDD = 100 V, Tj = 25°C (see Figure 18) 500 5.2 21 ns µC A trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 13 A, di/dt = 100 A/µs, VDD = 100 V, Tj = 150°C (see Figure 18) 615 7 22.5 ns µC A |
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