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2SC4336 Datasheet(PDF) 1 Page - NEC |
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2SC4336 Datasheet(HTML) 1 Page - NEC |
1 / 5 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. SILICON POWER TRANSISTOR 2SC4336 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING DATA SHEET Document No. D17261EJ1V0DS00 (1st edition) Date Published July 2004 NS CP(K) Printed in Japan 2004 DESCRIPTION The 2SC4336 is a mold power transistor developed for high- speed switching and features a very low collector-to-emitter saturation. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching. FEATURES • Mold package that does not require an insulating board or insulation bushing • Fast switching speed • Low collector-to-emitter saturation voltage VCE(sat) ≤ 0.3 V MAX. (IC = 6.0 A) ORDERING INFORMATION PART NUMBER PACKAGE 2SC4336 Isolated TO-220 (MP-45) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 7.0 V Collector current (DC) IC(DC) 10 A Collector current (pulse) Note IC(pulse) 20 A Base current (DC) IB(DC) 6.0 A Total power dissipation (TC = 25 °C) PT 30 W Total power dissipation (TA = 25 °C) PT 2.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note PW ≤ 300 µs, Duty Cycle ≤ 10% PACKAGE DRAWING (Unit: mm) 10.5 MAX. 7 ±0.2 3.2 ±0.2 φ 3.0 MAX. 1.3 ±0.2 0.8 ±0.1 2.54 TYP. 2.54 TYP. 1.5 ±0.2 4.7 MAX. 2.5 ±0.1 0.5 ±0.1 123 1: Base 2: Collector 3: Emitter |
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