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2SK3572-Z Datasheet(PDF) 1 Page - NEC |
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2SK3572-Z Datasheet(HTML) 1 Page - NEC |
1 / 8 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR 2SK3572 SWITCHING N-CHANNEL POWER MOS FET DATA SHEET Document No. D16258EJ2V0DS00 (2nd edition) Date Published September 2002 NS CP(K) Printed in Japan © 2002 The mark 5 5 5 5 shows major revised points. DESCRIPTION The 2SK3572 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V drive available • Low on-state resistance RDS(on)1 = 5.7 m Ω MAX. (VGS = 10 V, ID = 40 A) • Low gate charge QG = 32 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 80 A) • Built-in gate protection diode • Surface mount device available ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 20 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±80 A Drain Current (pulse) Note ID(pulse) ±300 A Total Power Dissipation (TA = 25°C) PT1 1.5 W Total Power Dissipation (TC = 25°C) PT2 52 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Note PW ≤ 10 µs, Duty Cycle ≤ 1% ORDERING INFORMATION PART NUMBER PACKAGE 2SK3572 TO-220AB 2SK3572-S TO-262 2SK3572-ZK TO-263 2SK3572-Z TO-220SMD Note Note TO-220SMD package is produced only in Japan. 5 5 5 5 |
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