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NEC |
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1998 © Document No. D10846EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan COMPOUND TRANSISTOR CE1N2R on-chip resistor NPN silicon epitaxial transistor For mid-speed switching DATA SHEET 2002 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. The CE1N2R is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for actuator drives of OA equipments and electric equipments. FEATURES • On-chip zener diode for surge voltage absorption • On-chip bias resistor: R1 = 680 Ω, R2 = 10 kΩ • Low power consumption during driving: VOL = 0.3 V MAX.@V1 = 5.0 V, IC = 0.5 A • On-chip dumper diode for reverse cable ABSOLUTE MAXIMUM RATINGS (Ta = 25 °°°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 ±10 V Collector to emitter voltage VCEO 60 ±10 V Emitter to base voltage VEBO 15 V Collector current (DC) IC(DC) ±2.0 A Collector current (Pulse) IC(pulse) * ±3.0 A Base current (DC) IB(DC) 0.03 A Total power dissipation PT 1.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C *PW ≤ 10 ms, duty cycle ≤ 50 % PACKAGE DRAWING (UNIT: mm) |
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