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FIR6N40LG Datasheet(PDF) 2 Page - Shenzhen Foster Semiconductor Co., Ltd. |
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FIR6N40LG Datasheet(HTML) 2 Page - Shenzhen Foster Semiconductor Co., Ltd. |
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2 / 9 page  Electrical Characteristics (Ta=25℃ unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage ID=250μA，VGS=0 400 - - V △BVDSS/△TJ Breakdown Voltage Temperature Coefficient ID=250μA ,Reference to 25℃ - 0. 54 - V/℃ IDSS Zero Gate Voltage Drain Current VDS= 400V, V GS=0V - - 1 μA VDS= 320V, Tj=125℃ 10 IGSSF Gate-body leakage Current, Forward VGS=+30V, VDS=0V - - 100 nA IGSSR Gate-body leakage Current, Reverse VGS=-30V, VDS=0V - - -100 On Characteristics VGS(TH) Date Threshold Voltage ID=250μA,VDS=VGS 2 - 4 V RDS(ON) Static Drain-Source On-Resistance ID= 3A,V GS=10V - - 1.0 Ω Dynamic Characteristics Ciss Input Capacitance VDS=25V，VGS=0， f=1.0MHz - 810 980 pF Coss Output Capacitance - 80 105 Crss Reverse Transfer Capacitance - 15 20 Switching Characteristics Td(on) Turn-On Delay Time VDD= 200V，I D= 6A RG=25Ω (Note 3,4) - 35 nS Tr Turn-On Rise Time - 1 40 Td(off) Turn-Off Delay Time - 55 Tf Turn-Off Rise Time - 8 5 Qg Total Gate Charge VDS= 320V,V GS=10V， ID= 6A (Note 3,4) - nC Qgs Gate-Source Charge - 2.3 - Qgd Gate-Drain Charge - 6.4 - Drain-Source Diode Characteristics and Maximum Ratings Is Max. Diode Forward Current - - - 6 A ISM Max. Pulsed Forward Current - - - 24 VSD Diode Forward Voltage ID= 6A - V Trr Reverse Recovery Time IS= 6A,V GS =0V diF/dt=100A/ μs (Note3) - 2 30 - nS Qrr Reverse Recovery Charge - 1. 7 - μC Notes : 1, L= 17.9mH, IAS=6A, VDD=50V, RG=25Ω, Starting TJ =25°C 2, Repetitive Rating : Pulse width limited by maximum junction temperature 3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 4, Essentially Independent of Operating Temperature - - - 22 - - 1.5 - www.First-semi.com Page 2/9 FIR6N40BPG,FIR6N40LG |
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