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FIR12N60FG Datasheet(PDF) 2 Page - Shenzhen Foster Semiconductor Co., Ltd. |
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FIR12N60FG Datasheet(HTML) 2 Page - Shenzhen Foster Semiconductor Co., Ltd. |
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2 / 7 page  Characteristics Symbol Test conditions Min. Typ. Max. Unit Drain -Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 600 -- -- V VDS=600V VGS=0V -- -- 1 µA Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V -- -- ±100 nA Gate Threshold Voltage VGS(th) VGS= VDS, ID=250µA 2.0 -- 4.0 V Static Drain- Source On State Resistance RDS(on) VGS=10V, ID=6.0A -- 0.55 0.75 Ω Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz --- 1980 --- pF Output Capacitance Coss -- 170 -- Reverse Transfer Capacitance Crss -- 12 -- Turn-on Delay Time td(on) VDD=300V, ID=12A , RG=25Ω (Note 2,3) -- 37.0 -- ns Turn-on Rise Time tr -- 71.67 -- Turn-off Delay Time td(off) -- 80.0 -- Turn-off Fall Time tf -- 43.67 -- FIR12N60FG Characteristics Symbol Ratings Unit Thermal Resistance, Junction-to-Case RθJC 2.97 °C/W Thermal Resistance, Junction-to-Ambient RθJA 120 °C/W Thermal Characteristics Electrical Characteristics (Ta = 25 oC ) unless otherwise noted Total Gate Charge Qg VDS=480V, ID=12A, VGS=10V (Note 2,3) -- 24.35 -- nC Gate-Source Charge Qgs -- 7.79 -- Gate-Drain Charge Qgd -- 7.34 -- Characteristics Symbol Test conditions Min. Typ. Max. Unit Continuous Source Current IS Integral Reverse P-N Junction Diode in the MOSFET -- -- 12 A Pulsed Source Current ISM -- -- 48 Diode Forward Voltage VSD IS=12A,VGS=0V -- -- 1.5 V Reverse Recovery Time Trr IS=12A,VGS=0V, dIF/dt=100A/µS(Note2) -- 574 -- ns Reverse Recovery Charge Qrr -- 5.40 -- µC Notes: 1. L=30mH, IAS=6.0A, VDD=80V, RG=25Ω, starting TJ=25°C; 2. Pulse Test: Pulse widt h ≤300μs,Duty cycle≤2%; 3. Essentially independent of operating temperature. Source-Drain Diode Ratings And Characteristics VGS=0V, ID=250µA 600 -- -- V C, 25 C, 125 Drain-Source Leakage Current IDSS VDS=600V VGS=0V -- -- 50 µA VDS=600V VGS=0V -- -- 100 µA C, 25 C, 125 C, 150 www.First-semi.com Page 2/7 |
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