SI4814DY datasheet(1/2 Pages) VISHAY

No. de pieza	SI4814DY

Descripción Electrónicos	Dual N-Channel, 30-V (D-S) MOSFET with Schottky Diode

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Specification Comparison

Vishay Siliconix

Document Number 74072

www.vishay.com

11-May-05

Si4814BDY vs. Si4814DY

Description:

Dual N-Channel, 30-V (D-S) MOSFET with Schottky Diode

Package:

SO-8

Pin Out:

Identical

Part Number Replacements:

Si4814BDY-T1-E3 Replaces Si4814DY-T1-E3

Si4814BDY-T1-E3 Replaces Si4814DY-T1

Summary of Performance:

The Si4814BDY is the replacement to the original Si4814DY; both parts perform identically, including limits to the parametric

tables below.

ABSOLUTE MAXIMUM RATINGS (TA = 25oC UNLESS OTHERWISE NOTED)

Si4814BDY

Si4814DY

Parameter

Symbol

Ch-1

Ch-2

Ch-1

Ch-2

Unit

Drain-Source Voltage

VDS

30

Gate-Source Voltage

VGS

+20

V

TA = 25°C

7.5

7.8

7.0

7.8

Continuous Drain Current

TA = 70°C

ID

6

6.3

5.6

6

Pulsed Drain Current

IDM

40

Continuous Source Current

(MOSFET Diode Conduction)

IS

1.7

1.8

1.7

1.8

A

TA = 25°C

1.9

2.0

1.9

2.0

Power Dissipation

TA = 70°C

PD

1.2

1.3

1.2

1.3

W

Operating Junction & Storage Temperature Range

Tj & Tstg

-55 to 150

°C

Maximum Junction-to-Ambient - MOSFET

RthJA

65

60

65

60

°C/W

MOSFET SPECIFICATIONS (TJ = 25OC UNLESS OTHERWISE NOTED)

Si4814BDY

Si4814DY

Parameter

Symbol

Min

Typ

Max

Min

Typ

Max

Unit

Static

Ch-1

1.5

3.0

0.8

NS

Gate-Threshold Voltage

VGS(th)

Ch-2

1.5

2.7

0.8

NS

V

Ch-1

+100

Gate-Body Leakage

IGSS

Ch-2

+100

nA

Ch-1

1

Zero Gate Voltage Drain Current

IDSS

Ch-2

100

µA

Ch-1

20

On-State Drain Current

VGS = 10 V

ID(on)

Ch-2

20

A

Ch-1

0.0145

0.018

0.0175

0.021

VGS= 10 V

Ch-2

0.015

0.018

0.0165

0.020

Ch-1

0.019

0.023

0.027

0.0325

Drain-Source On-Resistance

VGS= 4.5 V

rDS(on)

Ch-2

0.018

0.022

0.0265

Ω

Ch-1

30

17

Forward Transconductance

gfs

Ch-2

35

20

S

Ch-1

0.75

1.1

0.7

1.1

Diode Forward Voltage

VSD

Ch-2

0.47

0.5

0.47

0.5

V

勝特力科技

886-3-5753170

百年電子

86-755-83289224

Http://www.100y.com.tw

勝特力科技

886-3-5753170

百年電子

86-755-83289224

Http://www.100y.com.tw

Número de pieza similar - SI4814DY

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Vishay Siliconix	SI4814BDY	199Kb / 12P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode 08-Feb-17
Vishay Siliconix	SI4814BDY	199Kb / 12P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode 08-Feb-17

More results

Descripción similar - SI4814DY

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Vishay Siliconix	SI4808DY	46Kb / 5P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. B, 26-May-03
	SI4818DY	68Kb / 8P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. B, 26-May-03
	SI4816BDY	88Kb / 9P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. A, 09-Aug-04
	SI4854DY	53Kb / 5P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. A, 16-Apr-01
	SI4834BDY-T1-E3	261Kb / 10P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. D, 18-May-09
	SI4834BDY	93Kb / 7P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. C, 29-Dec-03
	SI4650DY	155Kb / 12P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. D, 18-Jan-10
	SI4310BDY	152Kb / 10P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode 01-Jan-2022
	SI7872DP	149Kb / 10P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode 18-Jul-08
	SI7842DP	133Kb / 6P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode 01-Jan-2022
	SIZ980BDT	239Kb / 14P	Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode 01-Jan-2022

More results

SI4814DY Datasheet(PDF) 1 Page - Vishay Siliconix

SI4814DY Datasheet(HTML) 1 Page - Vishay Siliconix

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Descripción similar - SI4814DY

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