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2N4401 Datasheet(Hoja de datos) 4 Page - ON Semiconductor

No. de Pieza. 2N4401
Descripción  General Purpose Transistors(NPN Silicon)
Descarga  6 Pages
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Fabricante  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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 4 page
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2N4400 2N4401
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
6.0
8.0
10
0
4.0
2.0
0.1
2.0 5.0
10
20
50
1.0
0.5
0.2
0.01 0.02 0.05
100
Figure 9. Frequency Effects
f, FREQUENCY (kHz)
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
Bandwidth = 1.0 Hz
IC = 1.0 mA, RS = 150 Ω
IC = 500 µA, RS = 200 Ω
IC = 100 µA, RS = 2.0 kΩ
IC = 50 µA, RS = 4.0 kΩ
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
100 k
50
100 200
500
1.0 k 2.0 k
5.0 k 10 k
20 k
50 k
6.0
8.0
10
0
4.0
2.0
Figure 10. Source Resistance Effects
RS, SOURCE RESISTANCE (OHMS)
f = 1.0 kHz
IC = 50 µA
IC = 100 µA
IC = 500 µA
IC = 1.0 mA
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between
hfe and other “h” parameters for this series of transistors. To
obtain these curves, a high–gain and a low–gain unit were
selected from both the 2N4400 and 2N4401 lines, and the
same units were used to develop the correspondingly num-
bered curves on each graph.
Figure 11. Current Gain
IC, COLLECTOR CURRENT (mA)
0.1
0.2
0.5 0.7 1.0
2.0
3.0
10
0.3
100
200
20
70
50
300
Figure 12. Input Impedance
IC, COLLECTOR CURRENT (mA)
50 k
500
30
5.0 7.0
20 k
10 k
5.0 k
2.0 k
1.0 k
0.1
0.2
0.5 0.7
1.0
2.0
3.0
10
0.3
5.0 7.0
Figure 13. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
0.1
0.2
0.5 0.7
1.0
2.0
3.0
10
0.3
0.2
10
Figure 14. Output Admittance
IC, COLLECTOR CURRENT (mA)
100
1.0
5.0 7.0
50
20
10
5.0
2.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
0.1
0.2
0.5 0.7 1.0
2.0 3.0
10
0.3
5.0 7.0




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